• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method for transferring a useful layer to a support comprising the steps of forming an embrittlement plane by implantation of light species in a first substrate, so as to delimit a useful layer between this plane and a surface of the first substrate; assembling the support with the surface of the first substrate to form an assembly for fracturing and thermal fracture treatment of the first substrate along the embrittlement plane so as to postpone the useful layer on the support. According to the invention, the method comprises, during the fracture heat treatment step, a treatment for reducing the degree of peripheral adhesion at the interface between the support and the first substrate.
    公开号:FR3032555A1
    申请号:FR1551046
    申请日:2015-02-10
    公开日:2016-08-12
    发明作者:Didier Landru；Oleg Kononchuk；Mohamed Nadia Ben
    申请人:Soitec SA；
    IPC主号:
    专利说明:

    [0001] FIELD OF THE INVENTION The present invention relates to a method for transferring a useful layer to a support substrate. BACKGROUND ART OF THE INVENTION It is known from the state of the art a method of transferring a useful layer 3 onto a support substrate 4, shown in FIG. 1, this method comprising the following main steps: in a step a), the formation of an embrittlement plane 2 by implantation of light species in a first substrate 1 so as to delimit a useful layer 3 between this plane and a surface of the first substrate; in a step b), the application of the support 4 on the surface of the first substrate 1 to form a fracturing assembly 5; in a step c), the embrittlement heat treatment of the assembly to be fractured in a step d), the initiation and propagation of a fracture wave in the first substrate 1 along the embrittlement plane 2. During this process, the implanted species are at the origin of the development of microcavities. The embrittlement heat treatment has the effect of promoting the growth, coalescence and pressurization of these microcavities. Under the effect of this heat treatment alone, or by means of additional external forces, the initiation and the self-sustaining propagation of a fracture wave makes it possible to transfer the useful layer 3, by detachment at the level of the weakening plan 2.
    [0002] This process, described in particular in the documents WO2005043615 and WO2005043616 and designated by the name "Smart CutTM", is in particular useful for the manufacture of silicon-on-insulator substrates. In this case, the first substrate 1 and the support 4 consist of a silicon wafer, and one and / or the other of the first substrate 1 and the support 4 are surface-oxidized. These silicon on insulator substrates must meet very precise specifications. This is particularly the case for the average thickness and thickness uniformity of the useful layer 3. Compliance with these specifications is required for the proper functioning of the semiconductor devices that will be formed in and on this useful layer 3 .
    [0003] In some cases, the architecture of these semiconductor devices requires silicon-on-insulator substrates having an average thickness of the very small useful layer 3, for example less than 50 nm, or even less than 10 nm, and a uniformity of very constant thickness on the surface of the substrate. The thickness uniformity expected can thus be of the order of 1% maximum, corresponding to maximums of variation typically ranging from +/- 0.1 μm to +/- 1 nm over the entire surface of the substrate. It is customary, at the end of the "Smart Cut" process, to apply complementary finishing steps for the useful layer 3, such as engravings or surface smoothing heat treatments, in order to reach the level of specification expected. . The thickness of the useful layer 4 is not perfectly uniform after the fracture step. These variations in thickness can be for example in the form of a periodic pattern whose amplitude is of the order of nm or half-meter and whose wavelength is of the order of mm, or even cm. . The periodic pattern may be apparent over the entire useful layer, or only a portion. Thickness variations may also occur at a given zone of the useful layer 4, generally called the dense zone, corresponding to the zone of initiation of the fracture wave. Thickness variations can also have other origins and have other characteristics. It may be particularly difficult to sufficiently rectify the thickness non-uniformity of the useful layer 4 by the usual finishing techniques (etching, sacrificial oxidation, smoothing heat treatment, polishing) to achieve the level of uniformity. when it is high.
    [0004] It is possible to reduce the thickness nonuniformity of the useful layer 3 by seeking to lower the temperature at which initiation and propagation of the fracture wave occur. This can be achieved in a first approach by lowering the temperature of the embrittlement heat treatment step. However, this approach has the drawback of excessively lengthening the duration of the embrittlement heat treatment, which is not favorable for the industrial operation of the process. In some cases, it does not seem possible to cause fracture initiation, even for a very long treatment time, when the temperature of the heat treatment is below a threshold temperature.
    [0005] This is particularly the case for the production of SOI very fine substrate, which has been mentioned previously. Another approach aimed at lowering the temperature at which the initiation and propagation of the fracture wave occurs involves provoking this initiation by applying an external force, for example a mechanical force, to the fracturing assembly 5 placed at temperature. ambient or moderate temperature, after the heat treatment step, and without it has caused itself this fracture. But this approach also has limitations.
    [0006] It requires the development of equipment dedicated to this mechanical fracture step, which can be complex and expensive especially if the assembly to be fractured must be maintained in temperature.
    [0007] In addition, this fracture operation is capable of causing defects at the periphery of the useful layer 3 or the support 4, related to the insertion of the mechanical element at the assembly interface of the assembly to be fractured. .
    [0008] Finally, this approach requires precise control of the parameters of the weakening heat treatment step to bring the weakening plane into a sufficiently weakened state to allow the self-sustained propagation of the fracture after mechanical initiation, without however exceeding a threshold. beyond which this initiation occurs naturally during the heat treatment itself. This control is particularly tricky when the substrates are batch processed, with each fracture assembly in the batch having a slightly different sensitivity to the embrittlement heat treatment. OBJECT OF THE INVENTION An object of the invention is therefore to propose a method of transferring a useful layer onto a support, this useful layer having a well-controlled thickness uniformity, the process not having the aforementioned drawbacks. The invention aims in particular to provide silicon on insulator substrates whose useful layer has an average thickness of less than 50 nm, this useful layer having thickness variations whose amplitude is less than 1 nm.
    [0009] It is another object of the invention to provide a method for transferring a useful layer to a support whose industrial control is facilitated.
    [0010] BRIEF DESCRIPTION OF THE INVENTION In order to achieve at least one of these objects, the object of the invention provides a method of transferring a useful layer to a support comprising the following training steps. an embrittlement plane by implantation of light species in a first substrate, so as to delimit a useful layer between this plane and a surface of the first substrate; - assembling the support with the surface of the first substrate to form an assembly to be fractured; Thermal fracture treatment of the first substrate along the embrittlement plane so as to postpone the useful layer on the support.
    [0011] According to the invention, the method comprises, during the fracture heat treatment step, a treatment for reducing the degree of peripheral adhesion at the interface between the support and the first substrate. Surprisingly, the inventors of the present application have observed that this attenuation at the assembly interface made it possible to obtain the initiation and propagation of the fracture wave along the weakening plane at the helps a lower thermal energy contribution.
    [0012] According to other advantageous and nonlimiting features of the invention, taken alone or in combination, the heat treatment step consists of exposing the assembly to be fractured to an atmosphere of a furnace. the first substrate and the support comprise silicon and the temperature of the furnace atmosphere is greater than 350 ° C. the treatment for reducing the degree of peripheral adhesion comprises the introduction of water into the atmosphere of an oven. the light species implanted are chosen from hydrogen ions and helium ions. The treatment for reducing the degree of peripheral adhesion is applied to the interface at the interface between the support and the first substrate over a radial distance greater than 1 micron, preferably between 100 and 500 microns, from the edge of the assembly to be fractured. the fracture heat treatment step comprises: a first phase at a first temperature, the first phase not leading to the initiation of the fracture, then; a second phase at a second temperature. the treatment for reducing the degree of peripheral adhesion being applied during the second phase. The treatment for reducing the degree of peripheral adhesion being applied between the first and the second phase, at ambient temperature. The second temperature is lower than the first. the treatment for reducing the degree of peripheral adhesion comprises exposing the assembly to fracture to an environment having a humidity level higher than a determined rate for a duration greater than a determined duration. The treatment for reducing the degree of peripheral adhesion comprises exposing the assembly to be fractured to an etching environment. BRIEF DESCRIPTION OF THE DRAWINGS The invention will be better understood in the light of the following description of particular non-limiting embodiments of the invention with reference to the attached figures among which: FIG. 1 represents a transfer method of FIG. a useful layer on a support substrate according to the state of the art; FIG. 2 represents the method according to the invention; FIGS. 3a to 3c show different conditions of application of the treatment according to the invention presented on a view of the assembly surface of the first substrate and of the support; FIGS. 4 to 6 show the evolution over time of the temperature of the fracture heat treatment for different embodiments of the invention. DETAILED DESCRIPTION OF THE INVENTION For the sake of simplification of the following description, the same references are used for identical elements or ensuring the same function in the various exposed embodiments of the process according to the invention, or in the process according to the state of the art.
    [0013] The detailed description of the process according to the invention is described with reference to FIG. 2. This method carries a useful layer 3 coming from a first substrate 1 onto a support 4.
    [0014] The first substrate 1 and the substrate 4 may be made of any material. It may be a semiconductor material (such as silicon, SiGe, germanium, galium nitride), an insulator (such as sapphire or glass) or a piezoelectric material (such as only lithium tantalate or lithium niobate). The first substrate 1 and / or the support 4 may be provided with an insulating layer comprising, for example, or consisting of a silicon or aluminum oxide or a silicon or aluminum nitride. It may then have been formed by deposition, oxidation or nitriding, as the case may be. In a particular embodiment of the invention, the first substrate 1 and the support 4 are silicon wafers in the form of disc whose diameter is typically 200 mm, 300 mm or even 450 mm. At least one of these wafers has an insulating layer on the surface, so that at the end of the process there is a silicon-on-insulator wafer. But the invention is not limited to these materials alone, this single form or these dimensions alone. The method according to the invention comprises a first step 2a of forming an embrittlement plane 2 by implantation of light species in the first substrate 1 so as to form a useful layer 3 between this plane and the implanted surface of the first substrate 1.
    [0015] The embrittlement plane 2 is typically made by implantation of hydrogen and / or noble gas. Thus, the light species can be selected from hydrogen and helium ions in doses of between 5 and 5 cm -1 / cm 2. The implantation energy is typically between 10keV and 200keV and defines the implantation depth of the ions.
    [0016] In a second step 2b, posterior to the first, the support 4 is assembled with the implanted surface of the first substrate 1, to constitute an assembly to be fractured 5. This assembly is preferably carried out by molecular adhesion, that is to say by adhesion direct surfaces between them without adding adhesive material (except water), and employing adhesion forces mainly van der Walls or covalent.
    [0017] By way of example, when the first substrate 1 and the support 4 are made of silicon and have either a layer of silicon oxide on the surface (intentionally or unintentionally provided), the adhesion forces are Van der Walls forces between the water molecules adsorbed on the surfaces The assembly step may be preceded by any surface treatment of the substrate 1 and the prior support 4 such as cleaning, plasma activation, etc.
    [0018] In a next step 2c, the assembly to be fractured is subjected to a fracture heat treatment step. This step aims at developing microcavities, platelets and / or other types of precursor defects of the fracture at the level of the embrittlement plane 2. It leads to the initiation and propagation of the fracture wave (this initiation and propagation being also referred to as "fracture" or "fracture initiation" in the present application) along the embrittlement plane 2 so as to defer the useful layer 3 to the support 4. In other words, the fracture is obtained in the present invention during this heat treatment and therefore does not require the application of an additional external force.
    [0019] This fracture heat treatment can also contribute to reinforcing the degree of adhesion between the first substrate 1 and the support 4.
    [0020] At the end of this fracture heat treatment step, and as shown in FIG. 2d, there is therefore, on the one hand, the useful layer 3 carried on the support 4, and on the other hand a residue 1 'of the first substrate 1 from which the useful layer 3 has been taken. This residue 1' may be reprocessed to serve as a new first substrate or as a support in a new layer transfer cycle, or for any other use.
    [0021] According to the invention, the method also comprises, during step 2c of fracture heat treatment and before the initiation of this fracture, a treatment for reducing the degree of peripheral adhesion between the support 4 and the first substrate 1, schematically represented by the arrows 6 in FIG. 2c. This treatment aims to weaken the adhesion energy existing between the support 4 and the first substrate 1 on at least a portion of a peripheral zone, that is to say on the edges of their surfaces in contact. Figures 3a to 3c show, in a view of the assembly surface of the first substrate 1 and the support 4 in the case where they are circular in shape, different configurations of application of the treatment of the invention. In these figures, the hatched surface represents the part of the peripheral zone where the treatment is applied. The treatment can thus be applied to a complete peripheral zone, that is to say along the complete contour of the assembly to be fractured 5, as represented in FIG. 3a; or only part of this contour is 3032555 11 say on a portion (Figure 3b) or more portions (Figure 3c) of the peripheral area. Whether this treatment is applied to a complete peripheral zone or to a part thereof only, the adhesion energy is preferentially weakened over a radial length d greater than 1 micron from the edge of the assembly to be fractured. This radial length d is typically chosen between 100 and 500 microns.
    [0022] Surprisingly, the inventors of the present application have observed that this weakening made it possible to obtain the initiation and propagation of the fracture wave along the embrittlement plane by means of a lower thermal energy input. . In other words, the thermal energy "threshold" required for the initiation of the fracture wave is reduced compared to a method not comprising the treatment according to the invention, but having characteristics that are identical elsewhere.
    [0023] The consequences of this observation are manifold. In the first place, when according to the invention this treatment for reducing the degree of peripheral adhesion is applied, it is possible to obtain the initiation and the propagation of the fracture wave at a fracture temperature lower than that of the known thermal processes. In addition, the initiation being thermally induced, one does not encounter the disadvantages related to the mechanical release of the fracture that have been exposed previously. And when the initiation and propagation of the fracture wave are obtained at a lower temperature, the useful layer 3 carried on the support 4 has a reduced non-uniformity.
    [0024] Finally, the treatment of the invention makes it possible to provoke the initiation of the fracture wave, which facilitates the industrial control of the process.
    [0025] The treatment for reducing the degree of peripheral adhesion can be obtained by exposing the assembly to be fractured to a chemical agent capable of affecting the quality or number of bonds established at the periphery of the surfaces of the support 4 and the first substrate 1. during assembly step 10. It may be an etching agent applied at the assembly interface and capable of etching the material or materials forming these surfaces in contact, on at least part of the outer edge. It may also be a corrosive agent diffusing along the assembly interface and capable of breaking the bonds established between the surfaces in contact.
    [0026] By limiting the exposure time of the assembly to be fractured to the etching agent and / or corrosive, it is ensured that the effect of reducing the degree of adhesion is well limited to at least a part of a peripheral area of the contacting surfaces. It may also be a step of mechanical attack of the assembly to be fractured at the assembly interface, so as to weaken the adhesion energy existing between the support 4 and the first one. substrate 1 on at least a portion of a peripheral zone. The observations which have just been made can be put to good use, and the invention implemented in several ways. According to a first embodiment, the fracture heat treatment step is carried out by exposing, in an oven, the assembly to be fractured at an atmosphere raised to a fracture temperature. And the treatment of reducing the degree of peripheral adhesion is achieved in this first embodiment, by introducing into the oven atmosphere 5 a chemical agent. This chemical agent will diffuse into the furnace atmosphere and over a limited length of the assembly interface between the support 4 and the first substrate 1 to, for example, etch the exposed surfaces and / or break the bonds which were formed, and reduce the degree of adhesion on a peripheral zone between the support 4 and the first substrate 1. This treatment, as we have seen previously, facilitates the initiation and propagation of the fracture. FIG. 4 represents, by way of example, the evolution over time of the temperature of the fracture heat treatment. This figure is represented by an arrow, the instant from which, in this example, the chemical agent is introduced into the furnace atmosphere. This moment may correspond to the beginning of the fracture heat treatment.
    [0027] However, the introduction of the chemical agent into the furnace atmosphere may occur at a later point in the fracture heat treatment, after an initial phase of embrittlement of the fracture assembly (5) or a plurality of fractures. fracturing assemblies (5) exposed to the atmosphere of the furnace. The introduction of the chemical agent leads to reducing the level of thermal energy "threshold" necessary for the fracture, and thus causes, in a controlled manner, this fracture.
    [0028] The initiation and propagation of the fracture wave can be achieved at a relatively low temperature and the useful layer will accordingly exhibit improved thickness uniformity. On the other hand, if the temperature of the furnace atmosphere 5 is kept identical to the known thermal processes, it is then possible, according to the invention, to reduce the duration of the fracture heat treatment. In a preferred variant of this first embodiment of the invention, shown in FIG. 5, the fracture heat treatment comprises a first phase at a first temperature, the first phase not leading to the initiation of the first phase. fracture, and a second phase at a second temperature lower than the first; the peripheral adhesion reducing treatment being applied during the second phase (represented by the arrow in this FIG. 5). By "phase temperature" is meant the average temperature applied during the phase in question, excluding the initial and final period of rise and fall in temperature if these are significant. The first and / or second phase may each be carried out in an oven atmosphere, as explained above, and in this case the temperature of the phase corresponds to the temperature of the furnace atmosphere. In this way, the invention makes it possible to rapidly weaken the assembly to be fractured during the first phase at a relatively high temperature (compared with the second temperature). The treatment for reducing the degree of adhesion is applied only during the second phase which follows, and which leads to the fracture of the useful layer 3 at a lower temperature, which favors the uniformity of this layer. According to a second embodiment of the invention, shown in FIG. 6, the step of reducing the degree of peripheral adhesion is carried out at ambient temperature between a first phase of the heat treatment during which the fracture does not occur and a second phase of heat treatment.
    [0029] It is thus possible, by performing the room temperature adhesion reduction treatment, to use a wider variety of techniques.
    [0030] According to such a first technique, similar to that which has been presented in the first embodiment, the weakening of the degree of adhesion in at least a part of a peripheral zone between the support 4 and the first substrate 1 is obtained. by placing the assembly to be fractured in a humid environment for a predetermined period of time. In humid environment is meant an environment with a moisture content greater than 10%, 50% or even 60%. The duration of exposure can be 10min, 30min, lh, 5h or even a day or more, for example depending on the degree and the desired attenuation. The environment may consist of an atmosphere or a liquid. The exposure of the assembly interface to this environment rich in water leads to breaking, at the periphery, certain bonds formed during the assembly step and thus to reduce the degree of adhesion.
    [0031] According to another technique, the attenuation is achieved by placing the assembly to be fractured in an etching environment for a specified period of time. The environment can consist of an atmosphere or a solution. The solution can be composed of or comprise water and 10% HF. The exposure of the assembly interface to this environment leads to etching, peripherally, the surfaces in contact with the support 4 and the first substrate 1 thus to reduce the degree of peripheral adhesion.
    [0032] Finally, it is conceivable to proceed to the step of reducing the degree of adhesion by mechanical attack of the assembly 5 to be fractured at the assembly interface. Comparative Example 1 A first substrate, consisting of a monocrystalline silicon wafer 300mm in diameter, is oxidized to form a thin oxide layer 25nm thick on the surface.
    [0033] This first substrate 1 is implanted in hydrogen and helium in respective doses of 1'16 at / cm ^ 2 and 1'16 at / cm ^ 2; and respective energies of 30 keV and 20 keV to delimit a useful layer 3.
    [0034] This first substrate 1 and a support 4, also formed of a monocrystalline silicon wafer 300mm in diameter, are molecularly bonded to one another in a conventional manner to form a fracturing assembly 5.
    [0035] The assembly to be fractured is placed in an oven and annealed in a nitrogen atmosphere for 3 hours. The nitrogen atmosphere has a temperature of 350 °.
    [0036] During the annealing, the fracture initiates itself spontaneously in the furnace and the useful layer 3 of silicon of 200 nm thickness is transferred on the support 4, to constitute a silicon on insulator substrate.
    [0037] The surface of this substrate is analyzed and has a thickness variation whose maximum amplitude is 0.4 nm. Comparative Example 2 A batch consisting of 25 sets to be fractured all identical to that of Example 1 is placed in a furnace.
    [0038] The heat treatment of Comparative Example 1 was repeated by changing only the temperature of the furnace atmosphere, raised to 300 ° C. After 4 hours of annealing, it is observed that the fracture did not initiate for any of the sets to be fractured. Example 1 A batch consisting of 25 sets to be fractured all identical to that of Example 1 is placed in an oven, in a nitrogen atmosphere, having a temperature of 350 ° C for 2 hours. After annealing, the fracture was not initiated and the batch was removed from the oven and placed at room temperature in a humid atmosphere (45% humidity) for 1 hour. The batch is then placed in the oven at 250 ° for 2 hours. At the end of this annealing, it is observed that all the plates spontaneously fractured. Moreover, the surface states of the useful layers are analyzed and show thickness variations whose maximum amplitude on a plate is less than 0.2 nm.
    [0039] EXAMPLE 2 The experiment of Example 2 is repeated, but between the two anneals the sets to be fractured are exposed to etching of the plate edge with a solution of water and HF diluted to 10%. instead of treatment in the humid atmosphere. The measurements made on the useful layers 3 are identical to those of Example 1. Example 3 A batch of substrate to be fractured 5 is prepared similarly to the two preceding examples, and placed in an oven in a 350 ° neutral atmosphere. during 2 hours.
    [0040] Without interrupting this annealing, the temperature is then reduced to 250 ° C. and the annealing continued for two hours at this temperature. At the beginning of this plateau at 250 °, water in the form of steam is injected into the furnace atmosphere.
    [0041] At the end of the annealing, it is observed that all the plates are fractured. The average thickness and non-uniformity measurements made on the useful layers are identical to those of Example 1 or 2.
    [0042] Naturally, the invention is not limited to the embodiments described and alternative embodiments can be made without departing from the scope of the invention as defined by the claims.
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. A method of transferring a useful layer (3) to a support (4) comprising the following steps of: - forming an embrittlement plane (2) by implantation of light species in a first substrate (1), so as to delimiting a useful layer (3) between this plane and a surface of the first substrate (1); - assembling the support (4) with the surface of the first substrate (1) to form a fracturing assembly (5); - fracture heat treatment of the first substrate (1) along the weakening plane (2) so as to transfer the useful layer (3) on the support (4); the method being characterized in that it comprises, during the fracture heat treatment step, a treatment for reducing the degree of peripheral adhesion at the interface between the support (4) and the first substrate (1).
    [0002]
    2. Transfer method according to the preceding claim wherein the heat treatment step comprises exposing the assembly to be fractured (5) to an atmosphere of a furnace. 30
    [0003]
    3. Transfer method according to the preceding claim wherein the first substrate (1) and the support (4) comprise silicon and wherein the temperature of the furnace atmosphere is greater than 350 ° C. 35
    [0004]
    4. The transfer method according to claim 1 or 2, wherein the fracture heat treatment step comprises: a first phase at a first temperature, the first phase not leading to fracture initiation, then; a second phase at a second temperature lower than the first temperature; the treatment for reducing the degree of peripheral adhesion being applied during the second phase.
    [0005]
    5. Transfer method according to the preceding claim wherein the first substrate (1) and the support (4) comprise silicon and wherein the second temperature is less than 350 ° C.
    [0006]
    6. Transfer method according to one of claims 2 to 5, wherein the treatment for reducing the degree of peripheral adhesion comprises introducing water into the furnace atmosphere.
    [0007]
    The transfer method according to claim 1 or 2, wherein the fracture heat treatment step comprises: - a first phase at a first temperature, the first phase not leading to initiation of the fracture, then; a second phase at a second temperature; the treatment for reducing the degree of peripheral adhesion being applied between the first and the second phase, at room temperature.
    [0008]
    8. Transfer method according to the preceding claim, wherein the second temperature is lower than the first.
    [0009]
    The transfer method of claim 7 or 8, wherein the peripheral adhesion reducing treatment comprises exposing the fracture assembly (5) to an environment having a moisture content greater than a rate. determined for a period longer than a specified period. 3032555 21
    [0010]
    10. Transfer method according to the preceding claim wherein the first substrate (1) and the support (4) comprise silicon, wherein the environment is the atmosphere, the determined rate is 10% and the determined duration is 15 5 minutes.
    [0011]
    The transfer method of claim 7 or 8, wherein the peripheral adhesion reducing treatment comprises exposing the fracture assembly (5) to an etching environment.
    [0012]
    12. Transfer method according to the preceding claim, wherein the etching environment comprises a solution of water and HF. 15
    [0013]
    13. The transfer method according to one of the preceding claims, wherein the implanted light species are selected from hydrogen ions and helium ions. 20
    [0014]
    The transfer method according to one of the preceding claims, wherein the treatment for reducing the degree of peripheral adhesion is applied to the interface at the interface between the support (4) and the first substrate (1) on a surface. radial distance greater than 1 micron from the edge of the assembly to be fractured.
    [0015]
    15. Transfer method according to the preceding claim, wherein the radial distance is between 100 and 500 microns.
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    US9362439B2|2008-05-07|2016-06-07|Silicon Genesis Corporation|Layer transfer of films utilizing controlled shear region|
    FR2987166B1|2012-02-16|2017-05-12|Soitec Silicon On Insulator|METHOD FOR TRANSFERRING A LAYER|FR3061988B1|2017-01-13|2019-11-01|Soitec|SURFACE MELTING METHOD OF SEMICONDUCTOR SUBSTRATE ON INSULATION|
    FR3074958B1|2017-12-08|2020-05-29|Commissariat A L'energie Atomique Et Aux Energies Alternatives|DIRECT ADHESION BONDING PROCESS|
    FR3091620B1|2019-01-07|2021-01-29|Commissariat Energie Atomique|Layer transfer method with localized reduction of an ability to initiate a fracture|
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    2016-08-12| PLSC| Publication of the preliminary search report|Effective date: 20160812 |
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1551046A|FR3032555B1|2015-02-10|2015-02-10|METHOD FOR DEFERRING A USEFUL LAYER|
    FR1551046|2015-02-10|FR1551046A| FR3032555B1|2015-02-10|2015-02-10|METHOD FOR DEFERRING A USEFUL LAYER|
    JP2016014598A| JP6606705B2|2015-02-10|2016-01-28|How to move the useful layer|
    CN201610076558.7A| CN105870048B|2015-02-10|2016-02-03|Method for transferring a useful layer|
    US15/018,465| US9922867B2|2015-02-10|2016-02-08|Method for transferring a useful layer|
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